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Datasheet BDW84 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDW84 | PNP SILICON POWER DARLINGTONS BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current Min |  Power Innovations Limited | data |
| 2 | BDW84 | PNP SILICON POWER DARLINGTONS BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS
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Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current
C B
SOT-93 PACKAGE (TOP VIEW) 1
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2
Minimum hFE |  Bourns Electronic Solutions | data |
| 3 | BDW84 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications.
PINNING PIN 1 2 3 Base |  SavantIC | transistor |
| 4 | BDW84 | PNP SILICON POWER DARLINGTONS PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are |  Comset Semiconductors | data |
| 5 | BDW84A | PNP SILICON POWER DARLINGTONS BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current Min | Power Innovations Limited | data |
BDW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDW21 | Bipolar NPN Device BDW21
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max  Seme LAB data | | |
| 2 | BDW21C | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BDW21C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma Seme LAB data | | |
| 3 | BDW22 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package BDW22
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BDW23 | NPN SILICON POWER DARLINGTONS BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at Power Innovations Limited data | | |
| 5 | BDW23 | Hammer Drivers/ Audio Amplifiers Applications BDW23/A/B/C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCB  Fairchild Semiconductor amplifier | | |
| 6 | BDW23A | Hammer Drivers/ Audio Amplifiers Applications BDW23/A/B/C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCB Fairchild Semiconductor amplifier | | |
| 7 | BDW23A | NPN SILICON POWER DARLINGTONS BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at Power Innovations Limited data | |
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