No | Part number | Description ( Function ) | Manufacturers | |
5 | BDW46 | Darlington Complementary Silicon Power Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDW42/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) — BDW46 VCEO(sus) = 100 Vdc (min.) — BD |
Motorola Inc |
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4 | BDW46 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = |
ON Semiconductor |
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3 | BDW46 | (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Motorola Semiconductors |
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2 | BDW46 | Trans Darlington PNP 80V 15A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
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1 | BDW46G | Darlington Complementary Silicon Power Transistors BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 |
ON Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |