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Datasheet BDV66C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BDV66C | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C APPLICATIONS ·Designed for audio output stages and genera |
 Inchange Semiconductor |
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| 1 | BDV66C | PNP Darlington Power Transistor BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO Colle |
 Comset Semiconductors |
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