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Datasheet BDV64C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BDV64C | PNP SILICON POWER DARLINGTONS |
 TRSYS |
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| 3 | BDV64C | PNP SILICON POWER DARLINGTONS BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 a |
 Power Innovations Limited |
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| 2 | BDV64C | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.
PINNING PIN 1 2 3 Base Colle |
 SavantIC |
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| 1 | BDV64C | Silicon PNP Darlington Power Transistor BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO
Rati |
 Comset Semiconductors |
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