| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | BDT83F | (BDT81F - BDT87F) Silicon NPN Power Transistors INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F/84F/86F/88F APPLICATIONS ·Designed for use in audio output stages an |
 Inchange Semiconductor |
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Recommended search results related to BDT83F |
| Part No | Description ( Function) | Manufacturers | |
| BDT83 | (BDT81 - BDT87) Silicon NPN Power Transistors INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 |
Inchange Semiconductor |
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| BDT83 | (BDT81 - BDT87) SILICON POWER TRANSISTOR NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. PNP c |
 Comset Semiconductors |
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| 100183 | 2 x 8 Bit Recode Multiplier |
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| 1024-883 | 1024/883 In-System Programmable High Density PLD ispLSI 1024/883 ® In-System Programmable High Density PLD Features • HIGH-DENSITY PROGRAMMABLE LOGIC — High-Speed Global Interconnect — 4000 PLD Gates — 48 I/O Pins, Six Dedicated Inputs — 144 Registers — Wide Input Gating for Fast Counters, State Machines, Address |
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| 11C83 | 1 Ghz Divide by 248/256 Prescaler |
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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