No | Part number | Description ( Function ) | Manufacturers | |
1 | BDT64F | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BDT64F/AF/BF/CF DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME |
INCHANGE |
0  1  2  3  4  5  6  7  8 9 |
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BDT64 | SILICON DARLINGTON POWER TRANSISTORS
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BDT64 | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general pur |
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BDT64 | Silicon Darlington Power Transistor SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP |
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BDT64A | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general pur |
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BDT64A | Silicon Darlington Power Transistor SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP |
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