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Datasheet BDS19 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BDS19 | Silicon PNP Power Transistor NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A ·High Reliablity
APPLICATIONS ·Designed for power linear and switching application and
General puepose pow |
 Inchange Semiconductor |
 |
| 2 | BDS19 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES BDS18 BDS18SMD BDS19 BDS19SMD
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6
16.5
3.6 Dia. 1 3 .5 1 0 .6
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
1.0 2 .5 4 BSC 2. 70 BSC
• HIGH RELIABILIT |
 Seme LAB |
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| 1 | BDS19SMD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES BDS18 BDS18SMD BDS19 BDS19SMD
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6
16.5
3.6 Dia. 1 3 .5 1 0 .6
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
1.0 2 .5 4 BSC 2. 70 BSC
• HIGH RELIABILIT |
Seme LAB |
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