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Datasheet BDS16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BDS16 | Silicon NPN Power Transistor NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS16
DESCRIPTION ·High Voltage: VCEV= 120V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 4A ·High Reliablity
APPLICATIONS ·Designed for power linear and switching application and
General puepose power. |
 Inchange Semiconductor |
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| 2 | BDS16 | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES BDS16 BDS16SMD BDS17 BDS17SMD
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6
16.5
3.6 Dia. 1 3 .5 1 0 .6
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
1.0 2 .5 4 BSC
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 |
 Seme LAB |
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| 1 | BDS16SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES BDS16 BDS16SMD BDS17 BDS17SMD
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6
16.5
3.6 Dia. 1 3 .5 1 0 .6
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
1.0 2 .5 4 BSC
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 |
Seme LAB |
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