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Datasheet BD898 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BD898 | PNP SILICON POWER DARLINGTONS |  TRSYS | data |
| 2 | BD898 | PNP SILICON POWER DARLINGTONS BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 |  Power Innovations Limited | data |
| 3 | BD898 | PNP SILICON POWER DARLINGTONS
BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS
● ● ● ●
Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin |  Bourns Electronic Solutions | data |
| 4 | BD898 | (BD896 / BD898) Silicon PNP Power Transistors Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type BD895/897/899/901 ¡¤DARLINGTON APPLICATIONS ¡¤For use in output stages in audio equipment, general amplifier,and analogue switching applications
PINNING PIN 1 |  Inchange Semiconductor | transistor |
| 5 | BD898 | (BD896 / BD898) Silicon NPN Power Transistors SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching appli |  Comset Semiconductors | transistor |
BD8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BD800 | EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Intersil Corporation transistor | | |
| 2 | BD801 | Plastic High Power Silicon NPN Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD801/D
Plastic High Power Silicon NPN Transistor
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is compleme  Motorola Inc transistor | | |
| 3 | BD801 | EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Intersil Corporation transistor | | |
| 4 | BD802 | Plastic High Power Silicon PNP Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD802/D
Plastic High Power Silicon PNP Transistor
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is compleme Motorola Inc transistor | | |
| 5 | BD802 | POWER TRANSISTORS PNP SILICON MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD802/D
Plastic High Power Silicon PNP Transistor
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is compleme  ON Semiconductor transistor | | |
| 6 | BD802 | EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Intersil Corporation transistor | | |
| 7 | BD805 | (BD8xx) Power Transistors Motorola Semiconductors transistor | |
| Esta página es del resultado de búsqueda del BD898. Si pulsa el resultado de búsqueda de BD898 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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