No | Part number | Description ( Function ) | Manufacturers | |
18 | BCX19 | NPN general purpose transistor DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX19 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • High current (500 mA) • Low voltage (45 V). APPLICATIONS • General purpose amplification • Saturated switching and drive |
NXP Semiconductors |
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17 | BCX19 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX19 BCX19R BCX17 U1 U4 BCX19 COMPLEMENTARY TYPES - C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T am |
Zetex Semiconductors |
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16 | BCX19 | NPN Medium Power Transistor BCX19 BCX19 NPN Medium Power Transistor • This device is designed for general purpose amplifiers. • Sourced from process 38. 3 2 1 SOT-23 Mark: U1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Jun |
Fairchild Semiconductor |
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15 | BCX19 | Surface mount Si-Epitaxial PlanarTransistors BCX 19, BCX 20 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classifi |
Diotec Semiconductor |
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14 | BCX19 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO 'C Value BCX19 BCX20 45 25 50 30 5.0 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device ADissipation, T = 25°C Derate above 25°C PD Storage Temperature Tstg •Thermal Resistance Junctio |
Motorola Semiconductors |
|
13 | BCX19 | SMALL SIGNAL NPN TRANSISTOR ® BCX19 SMALL SIGNAL NPN TRANSISTOR Type BCX19 Marking U1 s SILICON EPITAXIAL PLANAR NPN TRANSISTOR s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKING s THE PNP COMPLEMENTARY TYPE IS BCX17 APPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE SOT-23 INTERNAL SCHEM |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |