No | Part number | Description ( Function ) | Manufacturers | |
15 | BCX17 | PNP general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCX17; BCX18 PNP general purpose transistors Product specification Supersedes data of 1997 Feb 28 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • Saturated switching and driver applications |
NXP Semiconductors |
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14 | BCX17 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX17 BCX17R BCX19 – T1 – T4 BCX17 E C B COMPLIMENTARY TYPES - SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage (I C =-10mA) Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Base Current Peak Base |
Zetex Semiconductors |
|
13 | BCX17 | Surface mount Si-Epitaxial PlanarTransistors BCX 17, BCX 18 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classifi |
Diotec Semiconductor |
|
12 | BCX17 | GENERAL PURPOSE TRANSISTOR BCX17,18 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO Value BCX17 BCX18 45 25 50 30 5.0 500 Unit Vdc Vdc THERMAL CHARACTERISTICS Characteristic Symbol *Total Device Dissipation, TA = 25 |
Motorola Semiconductors |
|
11 | BCX17 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCX17 = T1 BCX18 = T2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open ba |
CDIL |
|
10 | BCX17 | SMALL SIGNAL PNP TRANSISTOR BCX17 SMALL SIGNAL PNP TRANSISTOR Type BCX17 Marking T1 s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING s NPN COMPLEMENTS IS BCX19 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO V EBO IC ICM IB IBM IEM Ptot Tstg Tj Param |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |