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Datasheet BCW68G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
17 | BCW68G | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
•c
BCW67 BCW68
32 45 45 60
5.0
800
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device ADissipation, T = 25°C
D |
Motorola Semiconductors |
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16 | BCW68G | PNP General Purpose Amplifier Features: tFor general AF applications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW65,BCW66(NPN)
Applications: t and switching applications
BCW67/BCW68
Ordering Information
Type No. BCW67A/B/C BCW68F/G/H
Marking: DA/DB/DC DF/DG/DH
Maximum Ratings & C |
Multicomp |
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15 | BCW68G | SILICON PNP TRANSISTORS BCW67 SERIES BCW68 SERIES
SURFACE MOUNT PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen |
Central Semiconductor |
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14 | BCW68G | PNP TRANSISTOR RoHS
BCW68G
PNP EPITAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
DABSOLUTE MAXIMUM RATINGS at Ta=25
TCharacteristic
Symbol Rating
Collector-Emitter Voltage
Vceo
-45
.,LCollector-Base Voltage
Vcbo
-60
Collector Current
Ic -800
Collector Dissipation Ta=25 *
PD 225
OJ |
WEJ |
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Número de pieza | Descripción | Fabricantes | |
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