No | Part number | Description ( Function ) | Manufacturers | |
11 | BCW60B | NPN EPITAXIAL SILICON TRANSISTOR |
Samsung semiconductor |
|
10 | BCW60B | NPN general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product specification Supersedes data of 1997 Mar 10 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification |
NXP Semiconductors |
|
9 | BCW60B | NPN EPITAXIAL SILICON TRANSISTOR BCW60A/B/C/D GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC T STG Rating 32 32 5 100 350 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector |
Fairchild Semiconductor |
|
8 | BCW60B | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs |
Siemens Semiconductor Group |
|
7 | BCW60B | NPN Silicon AF Transistors BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B |
Infineon Technologies AG |
|
6 | BCW60B | GENERAL PURPOSE TRANSISTOR BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total Device Dissipation, TA = 25°C Derate above 25°C Symbol pd Storage Temperature |
Motorola Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |