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Datasheet BCW33 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | BCW33 | NPN General Purpose Amplifier NPN General Purpose Amplifier
FEATURES
z Low current(max.100mA). z Low voltage(max.32V).
Pb
Lead-free
Production specification
BCW31/32/33
APPLICATIONS
z General purpose switching and amplification.
ORDERING INFORMATION
Type No.
Marking
BCW31 BCW32 BCW33
D1 D2 D3
SOT-23
Package Code
SOT-23 |
 Galaxy Microelectronics |
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| 9 | BCW33 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO Vebo
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
•Therm |
 Motorola Semiconductors |
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| 8 | BCW33 | NPN General Purpose Transistors SMD Type
TransistIoCrs
NPN General Purpose Transistors BCW31,BCW32,BCW33
Features
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
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 Kexin |
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| 7 | BCW33 | NPN EPITAXIAL SILICON TRANSISTOR |
 Samsung semiconductor |
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