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Datasheet BCP5616Q Equivalent ( PDF )

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1 BCP5616Q   NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < 500mV @
Diodes
Diodes		 datasheet BCP5616Q pdf

BCP56 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
BCP56

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – AUGUST 1995 7 FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE – PARTMARKING DETAILS – BCP53 BCP56 BCP56 – 10 BCP56 – 16 C BCP56 E C B ABSOLUTE MAX
 Zetex Semiconductors
Zetex Semiconductors		 datasheet pdf - Zetex Semiconductors
BCP56-16T1

NPN Silicon Epitaxial Transistor

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
BCP56

NPN medium power transistors

BCP56; BCX56; BC56PA 80 V, 1 A NPN medium power transistors Rev. 9 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1]
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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