No | Part number | Description ( Function ) | Manufacturers | |
2 | BC879 | NPN Darlington transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 May 28 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High DC current gain (min. 1000) • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. A |
NXP Semiconductors |
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1 | BC879 | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain q Low collector-emitter saturation voltage q Complementary types: BC 876, BC 878 BC 880 (PNP) q 2 3 1 Type BC 875 BC 877 BC 879 Marking – Ordering Code C62702-C853 C62702-C854 C62702-C855 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-bas |
Siemens Semiconductor Group |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |