No | Part number | Description ( Function ) | Manufacturers | |
10 | BC638 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" ECB High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Bas |
CDIL |
|
9 | BC638 | PNP Type Plastic Encapsulate Transistors Elektronische Bauelemente BC636/638/640 PNP Type Plastic Encapsulate Transistors FEATURE Power Dissipation: PCM: 0.83 mW (Tamb=25oC) RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.5±0.2 TO-92 4.55±0.2 3.5±0.2 14.3±0.2 MAXIMUM RATINGS (TA=25 oC unless otherwise specified) 0.4 6+–00..11 0.43+–00..0078 (1.27 Typ). 123 1.25+–00..22 2 |
SeCoS |
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8 | BC638 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT TRANSISTORS. FEATURES ᴌComplementary to BC637. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg RATING -60 -60 -5 -500 625 150 -55ᴕ150 UNIT |
KEC |
|
7 | BC638 | PNP medium power transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers. DESCRIPTION PNP |
NXP Semiconductors |
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6 | BC638 | PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 Symbol VCER Rating -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1. |
Fairchild Semiconductor |
|
5 | BC638 | High Current Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC636/D High Current Transistors PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER BC636 BC638 BC640 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ |
Motorola Inc |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |