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Datasheet BB503 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BB503 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB503C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
 Hitachi |
 |
| 3 | BB503 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB503C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
Hitachi |
|
| 2 | BB503C | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB503C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
Hitachi |
|
| 1 | BB503M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB503M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-811B(Z) 3rd. Edition Jul. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
Hitachi |
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