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Datasheet BB502 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BB502 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
 Hitachi |
 |
| 3 | BB502 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
Hitachi |
|
| 2 | BB502C | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
Hitachi |
|
| 1 | BB502M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-809B(Z) 3rd. Edition Jun. 1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD |
Hitachi |
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