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Datasheet BB501 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BB501 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to |
 Hitachi |
 |
| 3 | BB501 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to |
Hitachi |
|
| 2 | BB501C | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to |
Hitachi |
|
| 1 | BB501M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-700C (Z) 4th. Edition Nov. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to |
Hitachi |
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