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Datasheet BB149 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BB149 | UHF variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D049
BB149 UHF variable capacitance diode
Product specification Supersedes data of 1996 May 03 1998 Sep 15
Philips Semiconductors
Product specification
UHF variable capacitance diode
FEATURES • Excellent linearity • Excellent matching to 1% DM |  Philipss | diode |
| 2 | BB149 | UHF variable capacitance diode |  Leshan Radio Company | diode |
| 3 | BB149A | UHF variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D049
BB149A UHF variable capacitance diode
Product specification 1997 Dec 17
Philips Semiconductors
Product specification
UHF variable capacitance diode
FEATURES • Excellent linearity • Excellent matching to 2% DMA • Very small plastic SMD p | Philipss | diode |
BB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-505 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand  Hitachi amplifier | | |
| 2 | BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-504 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
| 3 | BB102C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 4 | BB102M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 5 | BB105 | Silicon Planar Signal Diodes Iskra Semic diode | | |
| 6 | BB105A | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
 Tele Fun Ken diode | | |
| 7 | BB105B | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Tele Fun Ken diode | |
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