No | Part number | Description ( Function ) | Manufacturers | |
15 | BAV170 | Low-leakage double diode DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25 NXP Semiconductors Low-leakage double diode Product data sheet BAV170 FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetit |
NXP Semiconductors |
|
14 | BAV170 | Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) Silicon Low Leakage Diode Array Low leakage applications q Medium speed switching times q Common cathode q BAV 170 Type BAV 170 Marking JXs Ordering Code (tape and reel) Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junctio |
Siemens Semiconductor Group |
|
13 | BAV170 | Introducing Very Low Leakage SOT-23 Diodes: New Product Announcement May 2001 Introducing Very Low Leakage SOT-23 Diodes: BAS116, BAV170, BAV199, BAW156! A SOT-23 B TOP VIEW C Dim A Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 E D G H B C D K J L M E G H J K L M Key Features BAS116 (Example Configuration) 1. Low leakage equivalents |
Diodes Incorporated |
|
12 | BAV170 | Silicon Low Leakage Diode Array BAV170... Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 1 D 2 1 2 Type BAV170 Parameter Package SOT23 Configuration common cathode Symbol VR VRM IF I FSM Value Marking JXs Unit Maximum Ratings at TA = 25°C, unless otherwise specified Diode reverse voltage Peak reverse voltage Forward current Non-repetitive p |
Infineon Technologies AG |
|
11 | BAV170 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23 plastic � |
Pan Jit International |
|
10 | BAV170 | Low-leakage Double Diode Elektronische Bauelemente BAV170 Low-leakage Double Diode Plastic-Encapsulate Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES z Low leakage current: typ. 3pA z Switching time: typ. 0.8µs 3 z Continuous reverse voltage:max.75V 1 z Repetitive peak reverse voltage:max.85V 2 z Repetitive peak forward current: max. 500mA. V MARKING:JX |
SeCoS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |