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Datasheet BAS19LT1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | BAS19LT1 | DIODE SWITCHING DIODE
RoHS
BAS19LT1
Features
Power dissipation PD : 225 mW (Tamb=25 C)
Pluse Drain
DIF : 200 mA TReverse Voltage
VR : 120V
.,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2 1.BASE 2.EMITTER 3.COLLECTOR
COANODE-CATHODE 3 IC1 2 ANODE |
WEJ |
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2 | BAS19LT1 | High Voltage Switching Diode
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage Switching Diode
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 Continuous Forward Curren |
ON Semiconductor |
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1 | BAS19LT1 | High Voltage Switching Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS19LT1/D
High Voltage Switching Diode
3 CATHODE 1 ANODE
BAS19LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge |
Motorola Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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