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Datasheet BAL99LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BAL99LT1 | DIODE SWITCHING DIODE
RoHS
BAL99LT1
Features
Power dissipation PD : 350 mW (Tamb=25 C)
Pluse Drain
DIF : 100 mA TReverse Voltage
VR : 70V
.,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2 1.BASE 2.EMITTER 3.COLLECTOR
COANODE-CATHODE 3 IC1 2 ANODE |
 WEJ |
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| 4 | BAL99LT1 | CASE 318-08/ STYLE 18 SOT-23 (TO-236AB) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAL99LT1/D
Switching Diode
ANODE 3 CATHODE 2
BAL99LT1
MAXIMUM RATINGS
3
Rating Continuous Reverse Voltage Peak Forward Current
Symbol VR IF
Value 70 100
Unit Vdc mAdc
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissip |
 Motorola Inc |
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| 3 | BAL99LT1 | Switching Diode BAL99LT1
Switching Diode
Features
•ăPb-Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR 70 Vdc
Peak Forward Current
IF 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional o |
 ON Semiconductor |
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| 2 | BAL99LT1 | Switching Diode |
 Leshan Radio Company |
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