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Datasheet BA157G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BA157G | Glass Passivated Fast Recovery Rectifiers BA157G thru BA159G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated Fast Recovery Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and |
 Taiwan Semiconductor |
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| 3 | BA157G | FAST GPP DIODES |
 Leshan Radio Company |
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| 2 | BA157GP | (BA157GP - BA159GP) 1 Amp Glass Passivated Fast Recovery Rectifier U Fast Recovery Rectifier 1 Amp. Glass Passivated 4 t
Dimensions in mm.
m o .c
BA157GP......BA159GP
w
w
a D . w
S a t
e e h
DO-41 (Plastic)
Voltage 400 to 1000 V.
Current 1.0 A. at 50 °C.
®
5 +0.2 -0 58.5 ± 0.5
Mounting instructions 1. Min. distance from body to soldering point, 4 mm. |
 Fagor |
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| 1 | BA157GP | (BA157GP - BA159GP) Glass Passivated Junction Fast Switching Rectifier www.DataSheet.co.kr
BA157GP thru BA159GP
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typ |
 Vishay Siliconix |
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| Número de pieza | Descripción | Fabricantes | |
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