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Datasheet B65940 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | B65940 | (B65939 / B65940) Core and Accessories
PS 25 × 8,9 Core and Accessories
Core
I Recommended for new designs I For inductive proximity switches I Material N22 for the frequency
B65939 B65940
range from about 60 to 600 kHz
Material N22
Approx. weight g 9
Ordering code B65939-A-X22
Coil former Material: GFR polyter |  EPCOS | data |
B65 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | B65283 | (B65804 / B65283) ELP 18/4/10 Core and Accessories
ELP 18/4/10 Core and Accessories (With Clamp Recess)
Core set EELP 18 Combination: ELP 18/4/10 with ELP 18/4/10
I In accordance with IEC 61860
B66283 B65804
ELP 18/4/10
14±0,3 4±0,1
2±0,1
Σl/A le Ae A min Ve
= 0,62 mm–1 = 24,3 mm = 39,3 mm2 = 38,9 mm2 = 955 mm3
18±0,3 EPCOS data | | |
| 2 | B65287 | (B65808 / B65287) ELP 32/6/20 Core and Accessories
ELP 32/6/20 Core and Accessories (With Clamp Recess)
Core set EELP 32 Combination: ELP 32/6/20 with ELP 32/6/20
I In accordance with IEC 61860
B66287 B65808
ELP 32/6/20
25,4±0,5 6,35±0,15
3,2±0,15 6,35±0,15
FEK0341-3
Magnetic characteristics (per set)
Σl/A le Ae A min Ve EPCOS data | | |
| 3 | B654-10 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | B654-100 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | B654-120 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | B654-20 | Diode, Rectifier American Microsemiconductor diode | | |
| 7 | B654-30 | Diode, Rectifier American Microsemiconductor diode | |
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| Número de pieza | Descripción | Fabricantes | |
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