No | Part number | Description ( Function ) | Manufacturers | |
1 | B1261-Z | PNP Transistor - 2SB1261-Z |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to B1261-Z |
Part No | Description ( Function) | Manufacturers | |
2SB1261 | PNP Transistor 2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Vol |
LGE |
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2SB1261 | Silicon PNP transistor 2SB1261 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package. 特征 / Features hFE 线性好,饱和压降低,耗散功率大。 Excellent hFE linearity, low VCE(sat), high PC. |
BLUE ROCKET ELECTRONICS |
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2SB1261-K | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SB1261-K DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATIONS ·Designed for use in audio amplifier and sw |
Inchange Semiconductor |
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2SB1261-Z | PNP SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
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2SB1261-Z | Plastic-Encapsulate Transistors Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operatin |
TRANSYS Electronics Limited |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |