No | Part number | Description ( Function ) | Manufacturers | |
1 | B1132 | PNP Transistor - 2SB1132 UNISONIC TECHNOLOGIES CO., LTD 2SB1132 MEDIUM POWER TRANSISTOR 1 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) 1 TO-252 *Pb-free plating product number: 2SB1132L ORDERING INFORMATION Order Number Package Normal Lead Free Plating www.DataSh |
Unisonic Technologies |
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Part No | Description ( Function) | Manufacturers | |
2DB1132P | 32V PNP POWER SWITCHING TRANSISTOR 2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Type: 2DD1664 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applic |
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2SB1132 | Medium Power Transistor Transistors Medium Power Transistor (*32V, *1A) 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: m |
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2SB1132 | PNP Plastic-Encapsulate Transistors 2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation |
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