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B1132 PDF Datasheet

The B1132 is PNP Transistor - 2sb1132. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 B1132
PNP Transistor - 2SB1132

UNISONIC TECHNOLOGIES CO., LTD 2SB1132 MEDIUM POWER TRANSISTOR 1 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) 1 TO-252 *Pb-free plating product number: 2SB1132L ORDERING INFORMATION Order Number Package Normal Lead Free Plating www.DataSh

Unisonic Technologies
Unisonic Technologies
pdf

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Recommended search results related to B1132

Part No Description ( Function) Manufacturers PDF
2DB1132P   32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applic

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2DB1132Q   32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applic

Diodes
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2DB1132R   32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applic

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2SB1132   Medium Power Transistor

Transistors Medium Power Transistor (*32V, *1A) 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: m

ROHM Semiconductor
ROHM Semiconductor
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2SB1132   PNP Plastic-Encapsulate Transistors

2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation

Weitron Technology
Weitron Technology
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[1]    

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Vishay Semiconductor
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