No | Part number | Description ( Function ) | Manufacturers | |
1 | AH1898 | PROGRAMMABLE MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH AH1898 PROGRAMMABLE MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH Description The AH1898 is a micropower magnetic range selectable (Bop/Brp) Omnipolar Hall effect switch IC with internal pull up and pull down capability, designed for portable and battery powered consumer equipment such as cellular phones and portable PCs. To support battery powered equipment and low voltage microcon |
Diodes |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to AH1898 |
Part No | Description ( Function) | Manufacturers | |
1898 | RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . . . 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION The SD18 |
STMicroelectronics |
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2SA1898 | PNP Epitaxial Planar Silicon Transistor Ordering number:5049 Applications · High-speed switching. Features · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Applica |
Sanyo Semicon Device |
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2SD1898 | Power Transistor (80V / 1A) 2SD1898 / 2SD1733 NPN 1.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4) |
ROHM Semiconductor |
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2SD1898 | Epitaxial Planar NPN Transistors 2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Tem |
Weitron Technology |
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2SD1898 | POWER TRANSISTOR UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING 100 80 |
Unisonic Technologies |
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