pdf datasheet site - dataSheet39.com

AGR21045EF PDF Datasheet

The AGR21045EF is Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 AGR21045EF
Transistor

Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. The

TriQuint Semiconductor
TriQuint Semiconductor
pdf

0    1    2    3    4    5    6    7    8   9  

  A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q    R    S   

 T    U    V    W    X    Y    Z    ALL


Recommended search results related to AGR21045EF

Part No Description ( Function) Manufacturers PDF
MRF21045LR3   RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multi

Motorola Semiconductors
Motorola Semiconductors
datasheet pdf
MRF21045LSR3   RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multi

Motorola Semiconductors
Motorola Semiconductors
datasheet pdf
MRF5P21045NR1   RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA a

Freescale Semiconductor
Freescale Semiconductor
datasheet pdf
MRF5S21045   RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita

Freescale Semiconductor
Freescale Semiconductor
datasheet pdf
MRF5S21045MBR1   RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita

Freescale Semiconductor
Freescale Semiconductor
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


Share Link


DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.


Sitemap Link

Index :     1N    2SC    74H    AD    BC    IRF    

  LM    TD    New    Sitemap    AGR



DataSheet39.com     |   2020    |

  Privacy Policy   |   Contact Us