No | Part number | Description ( Function ) | Manufacturers | |
1 | AGR21045EF | Transistor Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. The |
TriQuint Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to AGR21045EF |
Part No | Description ( Function) | Manufacturers | |
MRF21045LR3 | RF Power Field Effect Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multi |
Motorola Semiconductors |
|
MRF21045LSR3 | RF Power Field Effect Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multi |
Motorola Semiconductors |
|
MRF5P21045NR1 | RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA a |
Freescale Semiconductor |
|
MRF5S21045 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita |
Freescale Semiconductor |
|
MRF5S21045MBR1 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita |
Freescale Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |