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AGR19060E PDF Datasheet

The AGR19060E is Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 AGR19060E
Transistor

AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and s

TriQuint Semiconductor
TriQuint Semiconductor
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Recommended search results related to AGR19060E

Part No Description ( Function) Manufacturers PDF
LET19060C   RF POWER TRANSISTORS Ldmos Enhanced Technology

LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE PERFORMANCES POUT = 30 W EFF. = 25 % • GSM PERFORMANCES POUT = 65 W EFF. = 45 % • EXCELLENT THERMAL S

STMicroelectronics
STMicroelectronics
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MRF19060   RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CD

Motorola Semiconductors
Motorola Semiconductors
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MRF19060LR3   RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA,

Freescale Semiconductor
Freescale Semiconductor
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MRF19060LSR3   RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA,

Freescale Semiconductor
Freescale Semiconductor
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MRF19060R3   RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CD

Motorola Semiconductors
Motorola Semiconductors
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