No | Part number | Description ( Function ) | Manufacturers | |
1 | AGR19060E | Transistor AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and s |
TriQuint Semiconductor |
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Recommended search results related to AGR19060E |
Part No | Description ( Function) | Manufacturers | |
LET19060C | RF POWER TRANSISTORS Ldmos Enhanced Technology LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE PERFORMANCES POUT = 30 W EFF. = 25 % • GSM PERFORMANCES POUT = 65 W EFF. = 45 % • EXCELLENT THERMAL S |
STMicroelectronics |
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MRF19060 | RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CD |
Motorola Semiconductors |
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MRF19060LR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, |
Freescale Semiconductor |
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MRF19060LSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, |
Freescale Semiconductor |
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MRF19060R3 | RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CD |
Motorola Semiconductors |
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Vishay |
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