No | Part number | Description ( Function ) | Manufacturers | |
1 | AGR18125E | Transistor Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power am |
TriQuint Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to AGR18125E |
Part No | Description ( Function) | Manufacturers | |
18125A103JAT7A | C0G Dielectric C0G (NP0) Dielectric m o General Specifications .c U 4 t e e h S a at .D w w w PART NUMBER (see page 2 for complete part number explanation) 0805 Size (L" x W") Voltage 6.3V = 6 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2 Insulation Resistance (Ohm-Farads) Temperature C |
AVX Corporation |
|
18125xxxx | C0G Dielectric C0G (NP0) Dielectric m o General Specifications .c U 4 t e e h S a at .D w w w PART NUMBER (see page 2 for complete part number explanation) 0805 Size (L" x W") Voltage 6.3V = 6 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2 Insulation Resistance (Ohm-Farads) Temperature C |
AVX Corporation |
|
IDT72T18125 | (IDT72T18xxx) HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 2.5 VOLT HIGH-SPEED TeraSync™ FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 1 |
IDT |
|
MRF7S18125AHR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 |
Freescale Semiconductor |
|
MRF7S18125AHSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 |
Freescale Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |