AFS2-458 PDF Datasheet

W E N 16 October 2007 Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Tel: +44 (0) 20 8909 9595, Fax: +44 (0) 20 8909 2233 AFS2-458 500mW RF power amplifier module AFS2 amplifier module is intended to increase the transmitted power of a Radiometrix multi channel TR2M transceiver module. It provides transmit and receive paths, and can be simply 'dropped

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications Unit: mm · High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (I

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ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configuration

************************************************************************************* 2SC2458 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS(TA=25 ) Parameter Symbol Limits Unit Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO V Emitter -Base Volt

2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.