No | Part number | Description ( Function ) | Manufacturers | |
1 | AEQ20A48N | DC-DC / Industry Standard Isolated Quarter Brick Embedded Power for Business-Critical Continuity ALQ25/AEQ25 Series 62.5 to 100 Watts Rev. 01.24.07 AEQ25Series 1 of 2 Total Power: 100 Watts (5 and 12Vo device) 82.5 Watts (for the 3.3Vo device) 62.5 Watts (for the 2.5Vo device) Input Voltage: 36-75 VDC # of Output: Single Electrical Specifications Input Input Range Input Current (max.) Input Reflected-ripple 36 to 75 VDC 3 |
Emerson |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to AEQ20A48N |
Part No | Description ( Function) | Manufacturers | |
AEQ20A48 | DC-DC / Industry Standard Isolated Quarter Brick Embedded Power for Business-Critical Continuity ALQ25/AEQ25 Series 62.5 to 100 Watts Rev. 01.24.07 AEQ25Series 1 of 2 Total Power: 100 Watts (5 and 12Vo device) 82.5 Watts (for the 3.3Vo device) 62.5 Watts (for the 2.5Vo device) Input Voltage: 36-75 VDC # of Output: Single El |
Emerson |
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AEQ20A48 | DC-DC / Industry Standard Isolated Quarter Brick Embedded Power for Business-Critical Continuity ALQ25/AEQ25 Series 62.5 to 100 Watts Rev. 01.24.07 AEQ25Series 1 of 2 Total Power: 100 Watts (5 and 12Vo device) 82.5 Watts (for the 3.3Vo device) 62.5 Watts (for the 2.5Vo device) Input Voltage: 36-75 VDC # of Output: Single El |
Emerson |
|
AEQ20A48 | DC-DC / Industry Standard Isolated Quarter Brick Embedded Power for Business-Critical Continuity ALQ25/AEQ25 Series 62.5 to 100 Watts Rev. 01.24.07 AEQ25Series 1 of 2 Total Power: 100 Watts (5 and 12Vo device) 82.5 Watts (for the 3.3Vo device) 62.5 Watts (for the 2.5Vo device) Input Voltage: 36-75 VDC # of Output: Single El |
Emerson |
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2SA2048 | Silicon PNP transistor 2SA2048 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 开关速度快,饱和电压低,与 2SC5730 互补。 High speed switching, low saturation voltag |
BLUE ROCKET ELECTRONICS |
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2SA2048 | Medium power transistor (−30V/ −1.0A) Transistor 2SA2048 Medium power transistor (−30V, −1.0A) 2SA2048 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and ca |
ROHM Semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |