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AD401M82RBA-5 PDF Datasheet

The AD401M82RBA-5 is Cmos DynamIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 AD401M82RBA-5
CMOS Dynamic RAM

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16 Mega Bits 8M : 8 Mega Bits 4M : 4 Mega Bits 2M : 2 Mega Bits 1M : 1 Mega Bit Organization 4: x4 8 : x8 9 : x9 16 : x16 18 : x18 32 : x32 Refresh 1 : 1K 8 : 8K 2 : 2K 6 :16K 4 : 4K

ETC
ETC
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Recommended search results related to AD401M82RBA-5

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AS8C401825   3.3V Synchronous SRAMs

128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆   AS8C403625 AS8C401825 Description TheAS8C403625/1825 are high-speed SRAMs organized as 128K x 36/256K x 18. The AS8C403625/1825 SRAMs contain wr

Alliance Semiconductor
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AS8C401825-QC75N   3.3V Synchronous SRAMs

128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆   AS8C403625 AS8C401825 Description TheAS8C403625/1825 are high-speed SRAMs organized as 128K x 36/256K x 18. The AS8C403625/1825 SRAMs contain wr

Alliance Semiconductor
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K7B401825B   128Kx36/x32 & 256Kx18 Synchronous SRAM

K7B163625A K7B161825A Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature . 2. Add 165FBGA package 1. Final sp

Samsung semiconductor
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K7B401825B-QC   128Kx36/x32 & 256Kx18 Synchronous SRAM

K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330

Samsung semiconductor
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