Datasheet ACE4908A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ACE4908A	Dual P-Channel Enhancement Mode MOSFET ACE4908A Dual P-Channel Enhancement Mode MOSFET Description The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide su	ACE Technology

ACE49 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ACE4922	Dual N-Channel Enhancement Mode MOSFET ACE4922 Dual N-Channel Enhancement Mode MOSFET Description The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resist	ACE Technology
ACE4953B	Dual P-Channel Enhancement Mode Field Effect Transistor ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-20	ACE Technology
ACE4940M	Dual N-Channel 40-V MOSFET ACE4940M Dual N-Channel 40-V MOSFET Description The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to	ACE Technology

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Número de pieza	Descripción	Fabricantes	PDF
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