Datasheet ACE2600B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ACE2600B	Dual N-Channel Enhancement Mode Field Effect Transistor ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD pro	ACE Technology

ACE26 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ACE2600B	Dual N-Channel Enhancement Mode Field Effect Transistor ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load s	ACE Technology
ACE2607B	P-Channel Enhancement Mode Field Effect Transistor ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equip	ACE Technology

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Número de pieza	Descripción	Fabricantes	PDF
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