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Datasheet A940 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | A940 | PNP Transistor - 2SA940 INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA940
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073
APPLICATIONS ·Designed for use in general purpose power amplif |
 Inchange Semiconductor |
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| 3 | A940 | PNP EPITAXIAL SILICON TRANSISTOR 2SA940
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
TO-220
! Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Tem |
 Wing Shing Computer Components |
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| 2 | A940 | PNP Transistor - 2SA940 A
A
A
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 Mospec Semiconductor |
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| 1 | A940 | PNP Epitaxial Silicon Transistor A940 PNP Epitaxial Silicon Transistor
TO-220
VERTICAL DEFLECTION OUTPUT POWER AMPLIFIER
Complement to C2073 Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: PC(max)=1.5W
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol |
 Elite |
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