No | Part number | Description ( Function ) | Manufacturers | |
1 | A821S | PNP Transistor - 2SA821S 2SA821S Transistors High-voltage Amplifier Transistor (−210V, −30mA) 2SA821S zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collec |
ROHM Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to A821S |
Part No | Description ( Function) | Manufacturers | |
2SA821 | PNP Plastic Encapsulated Transistor 2SA821 Elektronische Bauelemente -0.03A , -210 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 G H High Breakdown Voltage Low Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SA821 |
Secos |
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2SA821 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 FEATURES TRANSISTOR (PNP) TO¡ª 92 Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage |
JIANGSU CHANGJIANG |
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2SA821S | HIGH VOLTAGE AMPLIFIER TRANSISTOR Transistors 2SA821S 2SC1651S (94L-183-A35) (94L-519-C35) 274 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change wi |
ROHM Semiconductor |
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2SA821S | PNP Transistor RoHS 2SA821S 2SA821S FEATURES Power dissipation PD: 0.25 TRANSISTOR (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150� |
WEJ |
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2SA821S | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJ |
JIANGSU CHANGJIANG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |