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A821S PDF Datasheet

The A821S is PNP Transistor - 2sa821s. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 A821S
PNP Transistor - 2SA821S

2SA821S Transistors High-voltage Amplifier Transistor (−210V, −30mA) 2SA821S zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collec

ROHM Semiconductor
ROHM Semiconductor
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Recommended search results related to A821S

Part No Description ( Function) Manufacturers PDF
2SA821   PNP Plastic Encapsulated Transistor

2SA821 Elektronische Bauelemente -0.03A , -210 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 G H High Breakdown Voltage Low Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SA821

Secos
Secos
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2SA821   PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 FEATURES TRANSISTOR (PNP) TO¡ª 92 Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage

JIANGSU CHANGJIANG
JIANGSU CHANGJIANG
datasheet pdf
2SA821S   HIGH VOLTAGE AMPLIFIER TRANSISTOR

Transistors 2SA821S 2SC1651S (94L-183-A35) (94L-519-C35) 274 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change wi

ROHM Semiconductor
ROHM Semiconductor
datasheet pdf
2SA821S   PNP Transistor

RoHS 2SA821S 2SA821S FEATURES Power dissipation PD: 0.25 TRANSISTOR (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150�

WEJ
WEJ
datasheet pdf
2SA821S   PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJ

JIANGSU CHANGJIANG
JIANGSU CHANGJIANG
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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