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A3PN125Z PDF Datasheet

The A3PN125Z is ProasIC3 Nano Flash Fpgas. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 A3PN125Z
ProASIC3 nano Flash FPGAs

Revision 11 ProASIC3 nano Flash FPGAs Features and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V

Microsemi Corporation
Microsemi Corporation
pdf

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Recommended search results related to A3PN125Z

Part No Description ( Function) Manufacturers PDF
A3PN125   ProASIC3 nano Flash FPGAs

Revision 11 ProASIC3 nano Flash FPGAs Features and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Vo

Microsemi Corporation
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American Microsemiconductor
American Microsemiconductor
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2SC3125   Silicon NPN epitaxial planer Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 2SC3125 TV Final Picture IF Amplifier Applications Unit: mm · Good linearity of fT Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curr

Toshiba Semiconductor
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2SC3125   Silicon NPN Epitaxial Planar Type

SMD Type Silicon NPN Epitaxial Planar Type 2SC3125 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features Good Lineality of fT +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Ab

Kexin
Kexin
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2SC3125   Silicon NPN RF Transistor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 DESCRIPTION ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect

Inchange Semiconductor
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[1]    

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