Datasheet A1988 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	A1988	PNP Transistor - 2SA1988 DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. PACKAGE DIMENSIONS 15.7 MAX. FEATURES • High Voltage VCEO = −200 V	NEC

A1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
A1SHB	P-Channel Trench Power MOSFET P-Channel Trench Power MOSFET General Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.	H&M Semiconductor
A1015	PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage	Jiangsu Changjiang
A1837	PNP Transistor - 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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