No | Part number | Description ( Function ) | Manufacturers | |
1 | A1962 | PNP Transistor - 2SA1962 2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O. |
Fairchild Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to A1962 |
Part No | Description ( Function) | Manufacturers | |
2SA1962 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maxi |
Toshiba Semiconductor |
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2SA1962 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W hi |
SavantIC |
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2SA1962 | PNP Epitaxial Silicon Transistor 2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = |
Fairchild Semiconductor |
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2SA1962 | POWER TRANSISTOR www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applicati |
Inchange Semiconductor |
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2SA1962 | Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
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