| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | A1952 | PNP Transistor - 2SA1952 2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dimensions (Units : mm) 2SA1952 (1) 0.9 0.75 5.5 1.5 2.3 5.1 0.9 (3) (2) 2.3 0.65 zAbsolute maxi |
 ROHM Semiconductor |
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Recommended search results related to A1952 |
| Part No | Description ( Function) | Manufacturers | |
| 2SA1952 | High-speed Switching Transistor (−60V/ −5A) 2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim |
ROHM Semiconductor |
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| BTA1952E3 | Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC curren |
 Cystech Electonics Corp |
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| BTA1952I3 | Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 Features BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at |
Cystech Electonics Corp |
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| BTA1952J3 | Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 BTA1952J3 Features • Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A • Excellent DC |
Cystech Electonics Corp |
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| A19-1 | 10 TO 1000 MHz CASCADABLE AMPLIFIER A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Frequency Small Signal Gain (min |
 Tyco |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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