No | Part number | Description ( Function ) | Manufacturers | |
1 | A1045 | PNP Transistor - 2SA1045
|
Fujitsu |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to A1045 |
Part No | Description ( Function) | Manufacturers | |
2SA1045 | Silicon Ring Emitter Darlington Transistors
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Fujitsu |
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KTA1045D | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KTA1045D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTC2025D/L MAXIMU |
KEC |
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KTA1045L | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KTA1045D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTC2025D/L MAXIMU |
KEC |
|
PTVA104501EH | Thermally-Enhanced High Power RF LDMOS FET PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with |
Infineon |
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Q62702-A1045 | Silicon PIN Diode |
Siemens Semiconductor Group |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |