No | Part number | Description ( Function ) | Manufacturers | |
3 | 9NM60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 9NM60 Preliminary Power MOSFET 9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-D |
Unisonic Technologies |
|
2 | 9NM60-S | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 9NM60-S Preliminary 9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 9NM60-S is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC |
Unisonic Technologies |
|
1 | 9NM60N | STD9NM60N STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This serie |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |