Datasheet 9N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	9N60	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 9N60 ·FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switchi	Inchange

9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
9D5N20P	KHB9D5N20P SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as f	KEC
9014C	NPN Silicon Transistor UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES High total power dissipation. (450mW) Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25	Unisonic Technologies
9971GD	AP9971GD AP9971GD RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package G2 D1 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 50mΩ 5A PDIP-8 S2 G1 S1 Description Advanced Power MOSFETs from	Advanced Power Electronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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