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Datasheet 8N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 8N65 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.4Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed |
 Inchange Semiconductor |
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| 6 | 8N65 | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 8N65
ITO-220AB 8N65F
TO-263 8N65B
TO-262 8N65H
Absolute Maximum Ratings(TC=25℃,unl |
 CHONGQING PINGYANG |
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| 5 | 8N65 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
8N65
8A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T |
 Unisonic Technologies |
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| 4 | 8N65B | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 8N65
ITO-220AB 8N65F
TO-263 8N65B
TO-262 8N65H
Absolute Maximum Ratings(TC=25℃,unl |
CHONGQING PINGYANG |
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