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Datasheet 80N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 80N60 | N-Channel Enhancement Mode Field Effect Transistor CMP80N06/CMB80N06/CMI80N06
N-Channel Enhancement Mode Field Effect Transistor
General Description Product Summery
The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
Features
Simple Drive Re |
Cmos |
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2 | 80N60A | IZGK80N60A Preliminary data
HiPerFASTTM IGBT
IXGK80N60A
VCES IC25 VCE(sat) tfi
= 600 V = 80 A = 2.7 V = 275 ns
Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Tra |
IXYS Corporation |
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1 | 80N60B | High Current IGBT High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B IXSX 80N60B
VCES =
IC25 = =VCE(sat)
600 V 160 A 2.5 V
Symbol
V CES
VCGR V
CES
VGEM I
C25
IC90 I
L(RMS)
ICM SSOA (RBSOA)
tsc SCSOA
PC TJ TJM Tstg TL Md Weight
Symbol
BVCES VGE(th) ICES
IGES
VCE(sat)
Test Conditions
Maximum Ratings
T J
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IXYS |
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Número de pieza | Descripción | Fabricantes | |
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