No | Part number | Description ( Function ) | Manufacturers | |
1 | 6N60B | N-CHANNEL MOSFET 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltag |
CHONGQING PINGYANG |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 6N60B |
Part No | Description ( Function) | Manufacturers | |
16N60 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rati |
nELL |
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16N60 | IXSA16N60 Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 ° |
IXYS |
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16N60 | FCP16N60 FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on) = 0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche te |
Fairchild Semiconductor |
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6N60 | N-CHANNEL MOSFET 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum |
CHONGQING PINGYANG |
|
6N60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
Unisonic Technologies |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |