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6N60B PDF Datasheet

The 6N60B is N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 6N60B
N-CHANNEL MOSFET

6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltag

CHONGQING PINGYANG
CHONGQING PINGYANG
pdf

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Recommended search results related to 6N60B

Part No Description ( Function) Manufacturers PDF
16N60   N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rati

nELL
nELL
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16N60   IXSA16N60

Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °

IXYS
IXYS
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16N60   FCP16N60

FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on) = 0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche te

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
6N60   N-CHANNEL MOSFET

6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum

CHONGQING PINGYANG
CHONGQING PINGYANG
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6N60   600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Unisonic Technologies
Unisonic Technologies
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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