No | Part number | Description ( Function ) | Manufacturers | |
1 | 628512LP | HM628512LP HM628512 Series 524288-word × 8-bit High Speed CMOS Static RAM ADE-203-236F (Z) Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot pri |
Hitachi |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 628512LP |
Part No | Description ( Function) | Manufacturers | |
HM628512 | 4 M SRAM (512-kword x 8-bit) HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS pr |
Hitachi Semiconductor |
|
HM628512A | 4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
|
HM628512AI | 524288 x 8-Bit High Speed CMOS SRAM |
Hitachi Semiconductor |
|
HM628512ALFPI | 524288 x 8-Bit High Speed CMOS SRAM |
Hitachi Semiconductor |
|
HM628512B | 4 M SRAM (512-kword x 8-bit) HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS pr |
Hitachi Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |